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US 2009/0156018 A1Published application
Laser mask and crystallization method using the same
AssigneeLG Display Co., Ltd.
InventorJaeSung You
Life of this patent
Estimating the term…
Abstract
A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.
Claims24
A crystallization method comprising:
- providing a substrate having a silicon thin film;
- positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region,
- wherein the laser mask includes a first mask pattern in the first block, a second mask pattern in the second block, a third mask pattern in the third block and a fourth mask pattern in the fourth block, each first to forth blocks having a periodic pattern including a plurality of transmitting regions and a blocking region;
- and
- crystallizing the silicon thin film by irradiating a laser beam through the laser mask.
2 more elements
A method for fabricating a display device comprising:
- forming a plurality of gate lines and data lines on a substrate, the gate and data lines crossing each other to define pixels;
- and
- forming a thin film transistor (TFT) near each crossing in the pixel including:
- providing a substrate having a silicon thin film,
- positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region,
- wherein the laser mask includes a first mask pattern in the first block, a second mask pattern in the second block, a third mask pattern in the third block and a fourth mask pattern in the fourth block, each first to forth blocks having a periodic pattern including a plurality of transmitting regions and a blocking region,
- crystallizing the silicon thin film by irradiating a laser beam through the laser mask.
4 more elements
Dependencies are inferred from the claim text.