Method for fabricating low k dielectric dual damascene structures

A method for the fabrication of a dual damascene structure on a substrate, comprising:

• plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate using a plasma formed from a process gas mixture comprising a fluorocarbon gas, a nitrogen-containing gas, and an inert gas;
• removing the first mask layer using a process comprising:
• exposing the first mask layer to a first plasma comprising an oxygen-containing gas and at least one of a dilutant gas or a passivation gas;
• and
• subsequently exposing the first mask layer to a second plasma comprising an oxygen-containing gas and formed using one of either plasma bias power or plasma source power;
• depositing an anti-reflective coating into the via and atop the low-k dielectric material;
• and
• plasma etching a trench through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material using a plasma formed from a process gas mixture comprising a fluorine-containing gas, a nitrogen-containing gas, and an inert gas.