Polishing slurry and polishing method
AssigneeHitachi Chemical Company, Ltd.
InventorsJin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
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AssigneeHitachi Chemical Company, Ltd.
InventorsJin Amanokura, Takafumi Sakurada, Sou Anzai, Masato Fukasawa, Shouichi Sasaki
Estimating the term…
The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
A polishing method comprising:
A polishing method comprising:
Dependencies are inferred from the claim text.