Compositions and methods for cmp of semiconductor materials
OwnerSriram Anjur, Jeffrey Dysard +3inventors
InventorsSriram Anjur, Jeffrey Dysard, Paul Feeney, Timothy Johns, Richard Jenkins
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Abstract
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semi-conductor materials. The composition comprises an abrasive, an organic amino compound, an acidic metal complexing agent and an aqueous carrier A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
Claims22
A chemical-mechanical polishing (CMP) composition comprising:
- (a) about 0.1 to about 15 percent by weight of a particulate abrasive material;
- (b) about 10 to about 5000 parts per million (ppm) of at least one organic amino compound;
- (c) about 10 to about 5000 ppm of at least one acidic metal complexing agent;
- and
- (d) an aqueous carrier therefor;
- the composition having a neutral or basic pH.
The CMP composition of claim I wherein the at least one acidic metal complexing agent is present in the composition in an amount in the range of about 100 to about 500 ppm.
The CMP composition of claim I further comprising a biocidal amount of a biocide.
A chemical-mechanical polishing (CMP) composition comprising:
- (a) about 3 to about 6 percent by weight of amorphous silica;
- (b) about 100 to about 1000 parts per million (ppm) of 2-dimethylamino-2-methylpropanol, a salt thereof, or a combination thereof;
- (c) about 100 to about 500 ppm of at least one acidic metal complexing agent selected from the group consisting of phosphoric acid, a dicarboxylic acid, a polycarboxylic acid, a phosphonic acid, a salt thereof, and a combination of two or more of the foregoing;
- and
- (d) an aqueous carrier therefor;
- the composition having a neutral or basic pH.
A chemical-mechanical polishing (CMP) method for polishing a semiconductor substrate, the method comprising the steps of:
- (a) contacting a surface of a semiconductor substrate with a polishing pad and an aqueous CMP composition, the CMP composition having a neutral or basic pH and comprising about 0.1 to about 15 percent by weight of a particulate abrasive material, about 10 to about 5000 parts per million (ppm) of at least one organic amino compound, about 10 to about 5000 ppm of at least one acidic metal complexing agent, and an aqueous carrier therefor;
- and
- (b) causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface between the pad and the substrate for a time period sufficient to abrade at least a portion of the semiconductor surface.
Dependencies are inferred from the claim text.