# US 2009/0156004 A1 · Method for forming tungsten materials during vapor deposition processes

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- Number: US 2009/0156004 A1
- Document ID: US20090156004A1
- Status: Published application
- Kind: A1
- Application number: 12/335,983
- Filed: 2008-12-16
- Published: 2009-06-18
- Earliest claimed: 2000-06-28
- Assignees: Applied Materials, Inc.
- Inventors: MORIS KORI; Alfred W. Mak; Jeong Soo Byun; Lawrence Chung-Lai Lei; Hua Chung
- Web page: https://patentgrep.com/patent/US20090156004A1

## CPC

- H10W 20/031: {of conductive parts of the interconnections}
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/14: Deposition of only one other metal element
- C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/45529: {specially adapted for making a layer stack of alternating different compositions or gradient compositions}
- C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C30B 25/02: Epitaxial-layer growth
- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C30B 29/38: Nitrides
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 14/432: {using selective deposition}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

## Claims

### Claim 1

A method for forming a tungsten material on a substrate surface, comprising:
heating a substrate within a deposition chamber;
exposing the substrate sequentially to a first processing gas comprising a tungsten precursor and a second processing gas comprising diborane to form a tungsten nucleation layer on the substrate during an atomic layer deposition process, wherein the tungsten nucleation layer comprises a fluorine concentration of about 1×1021 atoms/cm3 or less; and
depositing a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition process.

### Claim 2 (depends on 1)

The method of claim 1, wherein the fluorine concentration is about 1×1019 atoms/cm3 or less.

### Claim 3 (depends on 2)

The method of claim 2, wherein the fluorine concentration is about 1×1017 atoms/cm3 or less.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first processing gas further comprises hydrogen gas.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first processing gas further comprises nitrogen gas.

### Claim 6 (depends on 5)

The method of claim 5, wherein the tungsten precursor is tungsten hexafluoride.

### Claim 7 (depends on 1)

The method of claim 1, wherein the second processing gas further comprises hydrogen gas.

### Claim 8 (depends on 1)

The method of claim 1, wherein the second processing gas further comprises nitrogen gas.

### Claim 9 (depends on 1)

The method of claim 1, wherein the tungsten nucleation layer is formed having a thickness within a range from about 10 Å to about 100 Å.

### Claim 10 (depends on 1)

The method of claim 1, wherein the tungsten nucleation layer is formed having a thickness within a range from about 12 nm to about 20 nm.

### Claim 11 (depends on 1)

The method of claim 1, wherein the deposition chamber is a first deposition station within a deposition system containing multiple stations surrounded by a wall.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
moving the substrate from the first deposition station to a second deposition station subsequent the atomic layer deposition process and prior to the chemical vapor deposition process; and
forming the tungsten bulk layer within the second deposition station.

### Claim 13 (depends on 1)

The method of claim 1, wherein the substrate is heated to a temperature within a range from about 200° C. to about 400° C., and the deposition chamber is pressurized to a pressure within a range from about 1 Torr to about 10 Torr during the atomic layer deposition process.

### Claim 14 (depends on 1)

The method of claim 1, further comprising exposing the substrate to an initiation gas prior to the atomic layer deposition process, wherein the initiation gas comprises nitrogen or argon.

### Claim 15 (depends on 14)

The method of claim 14, wherein the substrate is exposed to the initiation gas for about 5 seconds.

### Claim 16

A method for forming a tungsten material on a substrate surface, comprising:
heating a substrate within a deposition chamber;
exposing the substrate sequentially to a first processing gas and a second processing gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition process, wherein the first processing gas comprises a tungsten precursor and a carrier gas and the second processing gas comprises a reagent and hydrogen gas; and
depositing a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition process.

### Claim 17 (depends on 16)

The method of claim 16, wherein the tungsten nucleation layer comprises a fluorine concentration of about 1×1019 atoms/cm3 or less.

### Claim 18 (depends on 17)

The method of claim 17, wherein the fluorine concentration is about 1×1017 atoms/cm3 or less.

### Claim 19 (depends on 18)

The method of claim 18, wherein the reagent is diborane.

### Claim 20 (depends on 18)

The method of claim 18, wherein the first processing gas comprises a hydrogen carrier gas.

### Claim 21 (depends on 16)

The method of claim 16, wherein the first processing gas comprises a nitrogen carrier gas.

### Claim 22 (depends on 21)

The method of claim 21, wherein the tungsten precursor is tungsten hexafluoride.

### Claim 23 (depends on 16)

The method of claim 16, wherein the deposition chamber is a first deposition station within a deposition system containing multiple stations surrounded by a wall.

### Claim 24 (depends on 23)

The method of claim 23, further comprising:
moving the substrate from the first deposition station to a second deposition station subsequent the atomic layer deposition process and prior to the chemical vapor deposition process; and
forming the tungsten bulk layer within the second deposition station.

### Claim 25

A method for forming a tungsten material on a substrate surface, comprising:
heating a substrate within a deposition chamber;
exposing the substrate sequentially to a first processing gas and a second processing gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition process, wherein the first processing gas comprises tungsten hexafluoride and a carrier gas and the second processing gas comprises diborane and hydrogen gas; and
depositing a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition process.