Method for depositing tungsten-containing layers by vapor deposition techniques

A method for forming tungsten materials on a substrate surface, comprising:

• transferring a substrate to a first processing position within a processing system;
• depositing a tungsten-containing layer by sequentially exposing the substrate to a processing gas and a tungsten-containing gas at the first processing position during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and the tungsten-containing layer is deposited at a deposition rate within a range from about 2 Å/cycle to about 5 Å/cycle;
• transferring the substrate to a second processing position within the processing system;
• and
• depositing a tungsten bulk layer over the tungsten-containing layer during a chemical vapor deposition process at the second processing position within the processing system.