Method of manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming, through at least an organic insulating film, a first hard mask containing an inorganic material and a second hard mask containing an inorganic material, a third hard mask containing an inorganic material, above a semiconductor substrate;
• forming a pattern of a wiring trench to be transcribed to the organic insulating film in the third hard mask, thereby exposing the second hard mask on a bottom of the pattern;
• forming a coated film by applying a first solution containing a solvent and an organic component above the third hard mask where the pattern of the wiring trench is formed;
• baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor;
• polishing the organic film precursor using a first slurry containing first resin particles having an average particle diameter ranging from 100-300 nm and a water-soluble polymer, thereby planarizing a surface of the organic film precursor;
• polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles having an average particle diameter ranging from 10-70 nm and a water-soluble polymer, thereby leaving the organic film precursor in the wiring trench pattern and exposing the third hard mask;
• applying a second solution containing a solvent and an organic component on the exposed surface of the third hard mask having the wiring trench pattern while leaving the organic film precursor in the wiring trench pattern, thereby forming an underlying film formed of an organic film;
• forming an intermediate layer and a resist film successively above the underlying film;
• and
• subjecting the resist film to patterning exposure.