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US 2009/0155993 A1Published application
Terminal pad structures and methods of fabricating same
AssigneeInternational Business Machines Corporation
InventorsDouglas D. Coolbaugh, Daniel C. Edelstein, Ebenezer E. Eshun, Zhong-Xiang He, Robert M. Rassel, Anthony K. Stamper
Life of this patent
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Abstract
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.
Claims17
A method, comprising:
- forming an electrically conductive wire in a dielectric layer on a substrate, said wire comprising a conformal and electrically conductive first liner and an electrically conductive first core conductor;
- forming a passivation layer on said top surface of said dielectric layer and said top surface of said wire;
- forming a trench in said passivation layer, said trench extending from a top surface of said passivation layer to said top surface of said wire;
- forming a terminal pad comprising an electrically conductive second core conductor and an electrically conductive second liner on sidewalls and the bottom of said trench, said second core conductor filling all portions of said trench not filled by said second liner, a top surface of said terminal pad coplanar with a top surface of said passivation layer, a first perimeter defined by all sides of said terminal pad aligned entirely within a second perimeter defined by all sides of said wire;
- forming a ball-limiting-metallurgy pad on a top surface of said terminal pad and overlapping all sides of said terminal pad;
- and
- forming a solder bump on a top surface of said ball-limiting-metallurgy pad.
4 more elements
The method of claim 4, wherein:
- said lower dielectric layer comprises silicon nitride or silicon carbide nitride;
- said intermediate dielectric layer comprises silicon dioxide;
- and
- said upper dielectric layer comprises silicon nitride,
1 more element
Dependencies are inferred from the claim text.