Methods of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Won Lee, Sang-Yeob Han, Chang-Ki Hong, Bo-Un Yoon, Jae-Dong Lee
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Abstract
A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
Claims19
A method of fabricating a semiconductor device, the method comprising:
- forming a gate pattern on a substrate;
- forming a capping pattern that covers an upper surface and sidewalls of the gate pattern;
- forming an interlayer insulation layer on the substrate such that an upper surface of the capping pattern is exposed;
- and
- removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
A method of fabricating a semiconductor device, the method comprising:
- forming a transistor structure having a planar upper surface on a substrate;
- removing an interlayer insulating layer adjacent to the transistor structure to form a cavity that exposes a portion of the substrate;
- and
- forming a conductive plug in the cavity.
Dependencies are inferred from the claim text.