Method of fabricating gallium nitride substrate
AssigneeSamsung Corning Precision Glass Co., Ltd.
InventorJeong Sik Lee
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Abstract
A method of fabricating a gallium nitride (GaN) substrate provides a GaN thick film without causing bending and cracks which may occur in a growing process. To this end, a nitride embedding layer having a plurality of voids therein is embedded between a GaN layer and a base substrate. The method includes preparing a base substrate, growing, on the base substrate, the nitride embedding layer having a plurality of indium-rich parts at a first temperature, and growing a GaN layer on the nitride embedding layer at a second temperature higher than the first temperature so as to metallize the indium-rich part to form a plurality of voids in the nitride embedding layer.
Claims15
A method of fabricating a gallium nitride (GaN) substrate comprising:
- a first step of preparing a base substrate,
- a second step of growing a nitride embedding layer on the base substrate at a first temperature, the nitride embedding layer having a plurality of indium-rich parts,
- a third step of growing a GaN layer on the nitride embedding layer, and
- a void forming step of applying a second temperature higher than the first temperature to the nitride embedding layer so that the indium-rich part is metallized to form a plurality of voids in the nitride embedding layer,
- wherein the first step, the second step and the third step are carried out in the order named, and the void forming step is carried out after the second step.
Dependencies are inferred from the claim text.