Backside protection film, method of forming the same and method of manufacturing a semiconductor package using the same
OwnerWon-keun Kim, Yong-kwan Leeinventors
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Abstract
A method of forming a backside protection film includes forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state, forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, separating the first coating layer from the first heterogeneous film, and attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material.
Claims20
A method of forming a backside protection film, comprising:
- forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state;
- forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state;
- separating the first coating layer from the first heterogeneous film;
- and
- attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material.
A method of manufacturing a semiconductor package, comprising:
- forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state;
- forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material;
- separating the first coating layer from the first heterogeneous film;
- attaching the first coating layer to a first surface of the second coating layer to form a backside protection film, the second coating layer being between the second heterogeneous film and the first coating layer;
- disposing an annular supporter and a semiconductor wafer on a second surface of the second coating layer, the first and second surfaces of the second coating layer being opposite each other, and the semiconductor wafer being positioned inside the annular supporter;
- dividing the semiconductor wafer into a plurality of discrete semiconductor chips, such that a space is formed between adjacent semiconductor chips;
- forming a protective material layer in the space between the adjacent semiconductor chips;
- and
- cutting the protective material layer and the backside protection film to form separate semiconductor packages, each semiconductor package including at least one semiconductor chip.
Dependencies are inferred from the claim text.