US 2009/0155979 A1 · Method of manufacturing a semiconductor device

Abstract

In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively formed into a first device isolation pattern on the first area. The first insulation layer is removed from the second area of the substrate and a semiconductor layer is formed on the second area of the substrate by a SEG process. The semiconductor layer on the second area is patterned into a second active pattern including a recessed portion and a second insulation pattern in the recessed portion is formed into a second device isolation pattern on the second area. Accordingly, grain defects in the LEG process and lattice defects in the SEG process are mitigated or eliminated.

Claims20

Dependent claims

A semiconductor device comprising:

a semiconductor substrate having defined thereon a first area and a second area;
a first active pattern comprising first single-crystalline semiconductor material grown from a surface of the first area of the substrate;
a first device isolation pattern comprising first insulation material and defining the first active pattern, to thereby electrically insulate neighboring elements of the first active pattern from each other;
a second active pattern comprising second single-crystalline semiconductor material grown from a surface of the second area of the substrate;
and
a second device isolation pattern comprising second insulation material and defining the second active pattern, to thereby electrically insulate neighboring elements of the second active pattern from each other, a side profile of the second device isolation pattern having an inclination that is opposite that of a side profile of the first device isolation pattern.

3 more elements

A method of manufacturing a semiconductor device, comprising:

partially removing a first insulation layer from a first area of a semiconductor substrate, thereby forming an opening defining a first active region of the first area of the substrate and forming a first insulation pattern including a residual first insulation layer surrounding the opening;
forming a first active pattern on the first active region of the first area of the substrate by filling the opening with first single-crystalline semiconductor material, thereby transforming the first insulation pattern surrounding the first active pattern into a first device isolation pattern on the first area of the substrate;
partially removing a semiconductor layer comprising second single-crystalline semiconductor material from the second area of the substrate, thereby forming a recessed portion through which a second field region defining a second active region on the second area of the substrate is formed and forming a second single-crystalline semiconductor pattern including a residual semiconductor layer surrounding the recessed portion;
and
forming a second device isolation pattern on the second field region of the second area of the substrate by filling the recessed portion with a second insulation layer, thereby transforming the second single-crystalline semiconductor pattern surrounding the second device isolation pattern into a second active pattern on the second area of the substrate.

2 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device

Life of this patent

Method of manufacturing a semiconductor device

Life of this patent

Abstract

Claims20