Atomic layer deposition of dy-doped hfo2 films as gate dielectrics

A method comprising:

• forming a dielectric layer on a substrate containing at least one hafnium oxide layer doped by at least one dysprosium oxide layer using a reaction sequence atomic layer deposition;
• and
• forming an electrically conductive layer on the dielectric layer;
• wherein the dielectric layer includes:
• exposing an activated substrate surface at a preselected temperature to a first precursor material for a preselected first time period and a preselected flow volume of the first precursor material to saturate the substrate surface with the first precursor material;
• exposing the substrate surface to a preselected volume of a first purge material for a preselected second time period to remove substantially all of a non-adsorbed portion of the first precursor material from the substrate surface;
• exposing the substrate surface to a preselected volume of a first reactant material for a preselected third time period to react with the adsorbed portion of the first precursor material on the substrate surface to form a first dielectric material having a first intermediate thickness to complete a first deposition cycle;
• exposing the substrate surface to a preselected volume of a second purge material for a preselected fourth time period to remove substantially all of a non-reacted portion of the first reactant material, and a first plurality of gaseous reaction byproducts from the substrate surface;
• repeating the first deposition cycle until a preselected final first dielectric material thickness is obtained;
• exposing the substrate surface to a second precursor material for a preselected fifth time period and a preselected flow volume of the second precursor material to saturate the substrate surface with the second precursor material;
• exposing the substrate surface to a preselected volume of a third purge material for a preselected sixth time period to remove substantially all of a non-adsorbed portion of the second precursor material from the substrate surface;
• exposing the substrate surface to a preselected volume of a second reactant material for a preselected seventh time period to react with the adsorbed portion of the second precursor material on the substrate surface to form a second dielectric material having a second intermediate thickness to complete a second deposition cycle;
• exposing the substrate surface to a preselected volume of a fourth purge material for a preselected eighth time period to remove substantially all of a non-reacted portion of the second reactant material, and a second plurality of gaseous reaction byproducts from the substrate surface;
• and
• repeating the second deposition cycle until a preselected final second dielectric material thickness is obtained.

A method comprising:

• forming a memory array in a substrate including:
• forming a dielectric layer containing a dysprosium oxide doped hafnium oxide layer in an integrated circuit including forming the dielectric layer by atomic layer deposition;
• depositing a conductive layer contacting the dielectric layer;
• and
• forming an address decoder in the substrate, the address decoder coupled to the memory array.