Method of forming a dielectric layer pattern and method of manufacturing a non-volatile memory device using the same

A method of manufacturing a non-volatile memory device, comprising:

• forming a tunnel oxide layer and a conductive layer pattern on a substrate;
• forming a first dielectric layer on a surface of the conductive layer pattern and a surface of the substrate;
• forming a control gate electrode on the first dielectric layer;
• partially removing the exposed first dielectric layer on an upper surface and upper sidewalls of the conductive layer pattern between the control gate electrodes and depositing the removed first dielectric layer on a surface of the first dielectric layer between the conductive layer patterns, to form a second dielectric layer having a thickness greater than that of the first dielectric layer from the substrate;
• etching the second dielectric layer on the sidewalls of the conductive layer pattern and the substrate to form a dielectric layer pattern;
• and
• etching the exposed conductive layer pattern between by the control gate electrodes to form a floating gate electrode.