Cmos image sensor and method for fabricating the same
OwnerChung-Kyung Junginventor
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Abstract
A method for fabricating a CMOS image sensor includes sequentially forming an insulating film, a metal pad and a first passivation film over a semiconductor substrate including photodiodes, forming a planarization layer over the first passivation film, forming color filter layers over the planarization layer, forming an overcoating layer over the semiconductor substrate including the color filter layers, forming micro lenses over the overcoating layer, forming a photoresist film over the semiconductor substrate including the first passivation film and the micro lenses, and then etching the first passivation film using the photoresist film as a mask to expose the metal pad.
Claims20
A method comprising:
- providing a semiconductor substrate having photodiodes;
- and then
- sequentially forming an insulating film, a metal pad and a first passivation film over the semiconductor substrate including the photodiodes;
- and then
- forming a planarization layer over the first passivation film;
- and then
- forming color filter layers over the planarization layer;
- and then
- forming an overcoating layer over the semiconductor substrate including the color filter layers;
- and then
- forming micro lenses over the overcoating layer;
- and then forming a photoresist film over the semiconductor substrate including the first passivation film and the micro lenses;
- and then etching the first passivation film using the photoresist film as a mask to expose the metal pad.
A method comprising:
- providing a semiconductor substrate having photodiodes;
- and then
- forming a first insulating film over the semiconductor substrate including the photodiodes;
- and then
- forming a metal pad over the first insulating film;
- and then
- forming a second insulating film over the first insulating film including the metal pad;
- and then
- forming a third insulating film over the second insulating film;
- and then
- forming a nitride layer over the third insulating film;
- and then
- forming color filter layers over the nitride layer;
- and then
- forming an overcoating layer over the color filter layers;
- and then
- forming micro lenses over the overcoating layer;
- and then
- forming a photoresist film over the semiconductor substrate including the third insulating film and the micro lenses;
- and then
- etching the third insulating film using the photoresist film as a mask to expose the metal pad and then removing the photoresist film.
A method comprising:
- providing a semiconductor substrate having photodiodes;
- and then
- forming a first insulating film over the semiconductor substrate including the photodiodes;
- and then
- forming a metal pad over the first insulating film;
- and then
- forming a second insulating film over the first insulating film including the metal pad;
- and then
- forming a nitride layer over the second insulating film;
- and then
- forming color filter layers over the nitride layer;
- and then
- forming an overcoating layer over the color filter layers;
- and then
- forming micro lenses over the overcoating layer;
- and then
- forming a photoresist film over the semiconductor substrate including the second insulating film and the micro lenses;
- and then
- etching the second insulating film using the photoresist film as a mask to expose the metal pad and then removing the photoresist film.
Dependencies are inferred from the claim text.