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US 2009/0155948 A1Published application
Methods for manufacturing cmos compatible bio-sensors
AssigneeNational Applied Research Laboratories
InventorsChen-Fu Lin, Hann-Huei Tsai, Ying-Zong Juang, Chin-Fong Chiu
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Abstract
A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure.
Claims17
A manufacture method for complementary metal oxide semiconductor sensor, comprising of:
- providing a substrate which contains multiple device structural layer;
- forming a protection layer to cover the substrate and those device structural layers;
- forming a first patterned photo-resist layer above the substrate;
- performing a first etching process to etch the protection layer until a first etch stop,
- forming a patterned molecular sensing layer above the substrate;
- forming a third patterned photo-resist layer above the substrate;
- and
- performing a second etching process to etch the protection layer and the substrate until a second etch stop so as to remove the substrate part beneath part of those sensor structural layers.
5 more elements
Dependencies are inferred from the claim text.