Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same

A method of manufacturing a nitride semiconductor light emitting diode, comprising:

• forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate;
• forming a dielectric pattern layer on the semi-polar nitride single crystal base layer;
• growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction;
• and
• forming a light emitting structure including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer on the semi-polar nitride single crystal thin film,
• wherein the growing of the semi-polar nitride single crystal thin film in a lateral direction includes:
• primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane;
• and
• secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.