Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsYoun Joon Sung, Ho Sun Paek
Life of this patent
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Abstract
Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.
Claims8
A method of manufacturing a substrate for forming a device, the method comprising the steps of:
- preparing a GaN substrate of which the a-plane or m-plane is set to a main plane;
- masking the main plane of the GaN substrate;
- and
- applying the masked GaN substrate to etching liquid, thereby forming a crystallographic surface.
A method of manufacturing a semiconductor laser diode, the method comprising the steps of:
- preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon;
- forming a plurality of laser diode structures on the GaN layer;
- etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane;
- and
- cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.
Dependencies are inferred from the claim text.