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US 2009/0155931 A1Published application
Ferroelectric layer with domains stabilized by strain
AssigneeIntel Corporation
InventorsQing Ma, Li-Peng Wang, Valluri Rao
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Abstract
The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.
Claims12
A method comprising:
- providing a substrate;
- forming an underlying layer over said substrate;
- heating said substrate;
- forming a ferroelectric layer over said underlying layer, said ferroelectric layer having a thickness below a critical thickness, said underlying layer having a smaller lattice constant than said ferroelectric layer;
- cooling said substrate to room temperature;
- and
- inducing a compressive strain in said ferroelectric layer.
4 more elements
A method comprising:
- providing an underlying layer;
- heating said underlying layer;
- forming a superlattice with a thickness over said underlying layer by alternately forming a thin layer of a ferroelectric material and a thin layer of a high dielectric constant material wherein said high dielectric constant material has a smaller lattice constant than said ferroelectric material;
- cooling said underlying layer;
- and
- applying a compressive strain to said superlattice.
3 more elements
A method comprising:
- providing an underlying layer;
- elastically bending said underlying layer to provide a tensile stress;
- forming a ferroelectric layer over said underlying layer;
- cooling said underlying layer;
- releasing said underlying layer;
- and
- producing a compressive strain in said ferroelectric layer.
4 more elements
Dependencies are inferred from the claim text.