Method of fine patterning semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsShi-Yong Yi, Kyoung-Taek Kim, Hyun-Woo Kim, Dong-Ki Yoon
Life of this patent
Estimating the term…
Abstract
For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures.
Claims25
A method of patterning during integrated circuit fabrication, the method comprising:
- activating an image layer for forming a respective first type polymer block at each of two nearest activated areas;
- forming a layer of block copolymer on the image layer;
- and
- forming a plurality of the first type polymer blocks, a plurality of second type polymer blocks, and a plurality of third type polymer blocks on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer,
- wherein the first type polymer blocks, the second type polymer blocks, and the third type polymer blocks are different types from each-other.
A method of patterning during integrated circuit fabrication, the method comprising:
- forming a plurality of first type polymer blocks, a plurality of second type polymer blocks, and a plurality of third type polymer blocks on an image layer from a block copolymer;
- wherein the first type polymer blocks, the second type polymer blocks, and the third type polymer blocks are different types from each-other;
- removing a first set of at least one block selected from the first, second, and third types of polymer blocks formed on a first area of the image layer;
- and
- removing a second set of at least one block selected from the first, second, and third types of polymer blocks formed on a second area of the image layer, wherein the second set is different from the first set.
Dependencies are inferred from the claim text.