Back to results
US 2009/0155629 A1Published application
Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
Life of this patent
Estimating the term…
Abstract
A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to die air bearing surface.
Claims21
A magnetoresistive sensor, comprising:
- a magnetic pinned layer structure;
- a magnetic tree layer structure;
- and
- a non-magnetic barrier layer sandwiched between the tree layer structure and the pinned layer structure;
- wherein the free layer structure further comprises:
- a first layer comprising CoFe adjacent to the non-magnetic barrier layer;
- a second layer comprising CoFeB adjacent to the first layer, opposite the barrier layer;
- an series of layers adjacent to the second layer, opposite the first layer, the series of layers including at least one layer of NiFe and at least one layer of CoFeX, where X comprises one or more materials selected from the group consisting of Nb, Mo, Hf, Zr, Y, W, Si, Cr and Ti.
5 more elements
A magnetoresistive sensor, comprising:
- a magnetic pinned layer structure
- a magnetic free layer structure;
- a non-magnetic barrier layer sandwiched between the free layer structure and the pinned layer structure;
- and wherein the free layer structure further comprises:
- a layer of CoFeB located adjacent to the non-magnetic barrier layer;
- and
- an amorphous, magnetic buffer layer adjacent to the layer of CoFeB, opposite the non-magnetic barrier layer.
4 more elements
Dependencies are inferred from the claim text.