Fuse and pad stress relief

A method for forming a structure, comprising:

• providing a substrate that comprises a first dielectric layer, wherein the first dielectric layer comprises a first dielectric material;
• forming at least one copper wire within the first dielectric layer such that a top surface of each copper wire is essentially coplanar with a top surface of the first dielectric layer, wherein each copper wire comprises copper;
• after said forming the at least one copper wire, forming a recess in the first dielectric layer from the top surface of each copper wire to a recess depth within the first dielectric layer such that the recess surrounds and is in direct mechanical contact with a perimeter surface of each copper wire, wherein the recess depth is less than a thickness of each copper wire in a direction perpendicular to the top surface of each copper wire;
• after said forming the recess, forming a capping layer in the recess and on the top surface of each copper wire and on the top surface of the first dielectric layer;
• forming a second dielectric layer comprising one or more dielectric sublayers on and in direct mechanical contact with the capping layer, wherein each dielectric sublayer comprises a dielectric material that is specific to each dielectric sublayer, wherein the capping layer comprises a dielectric capping material configured to prevent copper of each copper wire from passing through the capping layer into the second dielectric layer;
• wherein the recess depth has a magnitude sufficient to prevent a lateral fail of the capping layer during packaging and/or operation of the substrate;
• wherein the lateral fail comprises a delamination of a portion of the capping layer from the first dielectric layer;
• wherein the delamination is characterized by an angular gap comprising an acute angle exceeding zero degrees between the capping layer and the top surface of the first dielectric layer.