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US 2009/0155491 A1Published application
Film-forming method for forming metal oxide on substrate surface
AssigneeAnelva Corporation
InventorsAkira Kumagai, Hong Zhang
Life of this patent
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Abstract
A film-forming method includes the steps of introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container, and reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container.
Claims10
A film-forming method comprising:
- introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container;
- and
- reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container.
A film-forming method comprising:
- introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container such that the organic raw material gas and the oxygen radicals are for the first time brought into contact with each other in the vacuum container;
- and
- reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container.
A film forming method comprising:
- generating oxygen radicals in a plasma generating space in a vacuum container;
- introducing an organic raw material gas containing a metal element and the oxygen radicals into a film forming treatment space in the vacuum container such that the organic raw material gas containing a metal element and the oxygen radicals are brought into contact with each other for the first time in the film forming treatment space;
- and
- reacting the organic raw material gas containing a metal element with the oxygen radicals to form a metal oxide film on a surface of a substrate disposed in the vacuum container.
1 more element
Dependencies are inferred from the claim text.