Methods of making crystalline tantalum pentoxide
AssigneeMicron Technology, Inc.
InventorsVishwanath Bhat, Rishikesh Krishnan, Dan Gealy
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Abstract
There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
Claims25
A method of forming a crystalline oxide on a surface comprising:
- contacting a ruthenium-containing material comprising at least one oxygen-containing surface with water vapor under conditions effective to remove at least a portion of the oxygen from the at least one oxygen-containing surface;
- and
- forming crystalline tantalum pentoxide on at least a portion of the at least one oxygen-containing surface having oxygen removed therefrom.
A method of forming a crystalline oxide on a substrate comprising:
- contacting at least a portion of a substrate comprising a ruthenium-containing material having at least one oxygen-containing surface with water vapor under conditions effective to remove oxygen from the at least one oxygen-containing surface;
- contacting at least a portion of the ruthenium-containing material wherefrom the water vapor removed oxygen with at least one tantalum-containing precursor compound using a vapor deposition process to form a crystalline tantalum pentoxide material.
A method of making a capacitor comprising:
- providing a first electrode comprising a crystalline ruthenium-containing material comprising at least one oxygen-containing surface;
- contacting the first electrode with water vapor to remove at least a portion of the oxygen from the at least one oxygen-containing surface;
- forming a crystalline tantalum pentoxide material on at least a portion of the crystalline ruthenium-containing material;
- and
- forming a second electrode on at least a portion of the crystalline tantalum pentoxide material.
A method of forming a crystalline oxide on a surface comprising:
- contacting a ruthenium-containing material comprising at least one oxygen-containing surface with at least one treating composition selected from the group consisting of water, hydrazine, monomethyl hydrazine, carbon dioxide, and combinations thereof, under conditions effective to remove at least a portion of the oxygen from the oxygen-containing surface;
- and
- forming crystalline tantalum pentoxide on at least a portion of the ruthenium-containing material.
A method of forming a crystalline oxide on a surface comprising:
- contacting a ruthenium-containing material comprising at least one oxygen-containing surface with a plasma selected from the group consisting of hydrogen plasma and ammonia plasma, and combinations thereof, under conditions effective to remove at least a portion of the oxygen from the oxygen-containing surface;
- and
- forming as-deposited crystalline tantalum pentoxide on at least a portion of the surface.
Dependencies are inferred from the claim text.