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AssigneeNippon Steel Materials Col. Ltd.
InventorsNobuaki Ito, Kensuke Okazawa, Shinji Tokumaru, Masaki Okajima
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The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.
A high purity silicon production system for producing high purity silicon by bringing molten silicon and molten slag with a lower density than the molten silicon into contact in a crucible to make impurities in the molten silicon move into the molten slag, said high purity silicon production system characterized in that a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and in that the above crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.
A high purity silicon production method producing high purity silicon by bringing molten silicon and molten slag with a lower density than the molten silicon into contact in a crucible to make impurities in the molten silicon move into the molten slag, said high purity silicon production method characterized by using as the means for heating the above molten silicon a direct electromagnetic induction heating means arranged outside the outside wall surface of the above crucible and using as the crucible a crucible formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.
Dependencies are inferred from the claim text.