Particle display with jet-printed color filters and surface coatings
AssigneePalo Alto Research Center Incorporated
InventorsChristopher L. Chua, Zhihong Yang
Life of this patent
Estimating the term…
Abstract
A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is then filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.
Claims22
A method of forming a current directing aperture in a nitride optoelectronic device comprising:
- fabricating a crystalline active layer to emit light, the active layer to include nitride;
- depositing an aperture layer over the active layer, the deposition occurring at a temperature below approximately 800 degrees centigrade such that the aperture layer does not initially form a single crystal layer;
- etching the aperture layer to form an aperture;
- and,
- regrowing a crystalline heterostructure layer that includes nitride over the aperture layer to produce a buried aperture that directs current.
An optoelectronic device including a buried aperture comprising:
- an active region that emits light in an active layer, the active region including a nitride;
- a crystalline electrically resistive aperture layer formed over the active region, the electrically resistive layer including an aperture;
- and,
- a second crystalline layer that includes nitride formed over resistive aperture layer, the second crystalline layer doped to be electrically conductive and fill in the aperture in the electrically resistive layer, the second crystalline layer in combination with the electrically resistive aperture layer to direct current into a select active region in the active layer to generate light.
An optoelectronic device to emit light, the optoelectronic device comprising:
- a sapphire substrate;
- an active layer including a nitride material formed over the sapphire substrate,
- an electrically resistive material including an aperture, the resistive material formed from a crystallized amorphous material;
- a conducting material filling the aperture such that current is directed from the aperture into an active region in the active layer where the current causes light generation.
Dependencies are inferred from the claim text.