Semiconductor light emitting device
AssigneeFUJIFILM Corporation
InventorHideki ASANO
Life of this patent
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Abstract
In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.
Claims20
A semiconductor light emitting device, comprising a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below:
- a first clad layer;
- an active layer which includes at least one highly strained quantum well layer having a compressive strain amount not less than 1% with respect to the conductive semiconductor substrate;
- and a second clad layer,
- wherein the apparatus further comprises a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer.
Dependencies are inferred from the claim text.