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US 2009/0154271 A1Published application
Semiconductor memory device and method for testing the same
AssigneeHynix Semiconductor Inc.
InventorKi-Chang Kwean
Life of this patent
Estimating the term…
Abstract
Semiconductor memory device and method for testing the same includes a unit for characterized in that a burst length is increased in a test of a read operation and a write operation and a unit for connecting a plurality of banks to one data pad by sequentially and outputting the data.
Claims23
A semiconductor memory device, comprising:
- a unit configured so that a burst length is increased in a test of a read operation and a write operation;
- and
- a unit for connecting a plurality of banks to one data pad by sequentially and outputting data.
A semiconductor memory device, comprising:
- a burst controller configured to generate a plurality of control signals for increasing a predefined burst length more than two times in response to a read command and a write command in a test operation;
- a data align buffer configured to align input data and output data;
- and
- a driver configured to sequentially connect the data align buffer to a plurality of global input/output lines in response to the plurality of control signals.
1 more element
A method for testing a semiconductor memory device, the method comprising:
- generating a plurality of control signals for increasing a predefined burst length more than two times in response to a read command and a write command in a test operation;
- and
- sequentially connecting one data pad to a plurality of banks through a plurality of global input/output lines in response to the plurality of control signals.
A semiconductor memory device, comprising:
- a write tester configured to test the plurality of banks by sequentially transferring, to the plurality of banks, data corresponding to a burst length among a plurality of external data received through one data pad in response to a write command;
- and
- a read tester configured to enable the plurality of banks to output stored data corresponding to the burst length in response to a read command, and sequentially output the data external to the device through the one data pad.
Dependencies are inferred from the claim text.