Back to results
US 2009/0154237 A1Published application
Non-volatile semiconductor memory device
AssigneeKabushi Kaisha Toshiba
InventorNaoya TOKIWA
Life of this patent
Estimating the term…
Abstract
A non-volatile semiconductor memory device includes: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a first register group configured to store control data used for controlling memory operations; an adjusting data storage area defined in the memory cell array so as to store adjusting data used for adjusting the control data; and a second register group configured to store the adjusting data read from the adjusting data storage area.
Claims19
A non-volatile semiconductor memory device comprising:
- a memory cell array with electrically rewritable and non-volatile memory cells arranged therein;
- a first register group configured to store control data used for controlling memory operations;
- an adjusting data storage area defined in the memory cell array so as to store adjusting data used for adjusting the control data;
- and
- a second register group configured to store the adjusting data read from the adjusting data storage area.
2 more elements
A non-volatile semiconductor memory device comprising:
- a memory cell array with electrically rewritable and non-volatile memory cells arranged therein;
- a voltage generating circuit configured to generate multiple voltages required correspondingly to the memory operations;
- a first register group configured to store voltage trimming values supplied to the voltage generating circuit;
- and
- a second register group configured to store voltage adjusting values used for adjusting the voltage trimming values.
2 more elements
Dependencies are inferred from the claim text.