Magnetic Random Access Memory and Operating Method of the Same
AssigneeNEC Corporation
InventorYuukou Katou
Life of this patent
Estimating the term…
Abstract
A magnetic random access memory of a spin transfer process, includes a plurality of magnetic memory cells 10, a current supply unit 43+20+30 and a control unit 41. The current supply unit 43+20+30 supplies a write current to the magnetic memory cell 10. The control unit controls a supply of the write current supplied by the current supply unit 43+20+30 on the basis of a write data. Each magnetic memory cell 10 includes a magnetic material storage layer which stores a data by using a magnetization state, and at least one spin control layer which supplies spin electrons to the magnetic material storage layer on the basis of a same control principle independently of the write data, on the basis of the write current.
Claims22
A magnetic random access memory of a spin transfer process, comprising:
- a plurality of magnetic memory cells;
- a current supply unit which selects a target memory cell to which a data is written from said plurality of magnetic memory cells, and supplies a write current to said target memory cell;
- and
- a control unit which controls a supply of said write current supplied by said current supply unit on the basis of a write data,
- wherein each of said plurality of magnetic memory cells includes:
- a magnetic material storage layer which stores a data by using a magnetization state, and
- at least one spin control layer which supplies spin electrons to said magnetic material storage layer on the basis of a same control principle independently of said write data, on the basis of said write current.
An operating method of a magnetic random access memory of a spin transfer process, wherein said magnetic random access memory includes:
- a plurality of magnetic memory cells,
- a current supply unit, and
- a control unit,
- wherein each of said plurality of magnetic memory cells includes:
- a magnetic material storage layer which stores a data by using a magnetization state, and
- at least one spin control layer,
- wherein said operating method of said magnetic random access memory comprises:
- (a) said current supply unit selecting a target memory cell to which a data is written from said plurality of magnetic memory cells;
- (b) said control unit controlling said current supply unit on the basis of said write data such that said current supply unit supplies a write current to said target memory cell;
- and
- (c) said at least one spin control layer supplying spin electrons to said magnetic material storage layer on the basis of said same control principle, independently of said write data, on the basis of said write current.
Dependencies are inferred from the claim text.