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US 2009/0154032 A1Published application
Magnetoresistive sensor with nitrogenated hard bias layer for improved coercivity
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorJames Mac Freitag
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Abstract
A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer of CrMn disposed between the layer of NiTa and the layer of Ru. The novel seed structure allows a nitrogenated hard bias layer to be used, while maintaining a high magnetic coercivity of the hard bias layer.
Claims25
A magnetoresistive sensor, comprising:
- a sensor stack having a free layer, a pinned layer structure and a non-magnetic layer sandwiched between the free layer and pinned layer structure, the sensor stack having first and second laterally opposed sides;
- first and second hard bias structures formed at each side of the sensor stack, each hard bias structure further comprising:
- a first seed layer having trace amounts of nitrogen;
- a second seed layer comprising Ru formed over the first seed layer;
- and
- a hard magnetic layer formed over the first and second seed layers, the hard magnetic layer including trace amounts of nitrogen.
3 more elements
A method for manufacturing a magnetoresistive sensor, comprising:
- placing a wafer into a sputter deposition tool:
- depositing a first seed layer in an atmosphere that contains nitrogen;
- depositing a second seed layer;
- and
- depositing a magnetically hard bias layer in an atmosphere that contains nitrogen.
2 more elements
Dependencies are inferred from the claim text.