Ap free layer cpp sensor with top aperture

A method of fabricating a read sensor, the method comprising:

• forming a first shield layer;
• forming a sensor stack including an antiparallel (AP) free layer on the first shield layer;
• forming insulating material on the sensor stack;
• forming an aperture in the insulating material on the sensor stack;
• and
• forming a second shield on the insulating material, the aperture providing electrical coupling of the sensor stack and the second shield.

A method of fabricating a read sensor, the method comprising:

• depositing a first shield layer;
• depositing an antiferromagnetic (AFM) layer;
• depositing a reference layer;
• depositing a non-magnetic spacer layer;
• depositing an antiparallel (AP) free layer;
• depositing a cap layer;
• patterning a first resist structure;
• etching around the first resist structure to define a track width of the read sensor;
• depositing a hard bias layer to a height on side regions of the AP free layer that is substantially planar to a boundary between the AP free layer and the cap layer;
• depositing insulating material;
• removing the first resist structure;
• patterning a second resist structure on the cap layer;
• etching the cap layer around the second resist structure to define a width of the cap layer that is substantially smaller than a width of the AP free layer;
• depositing insulating material;
• removing the second resist structure;
• and
• depositing a second shield.

A method of fabricating a read sensor, the method comprising:

• depositing a first shield layer;
• depositing an antiferromagnetic (AFM) layer;
• depositing a reference layer;
• depositing a non-magnetic spacer layer;
• depositing an antiparallel (AP) free layer;
• depositing a cap layer;
• patterning a bi-layer resist structure on the cap layer, wherein the bi-layer resist is wider at a top portion as compared to a bottom portion that contacts the cap layer;
• etching around the bi-layer resist structure to define a track width of the read sensor;
• depositing a hard bias layer to a height on side regions of the AP free layer that is substantially planar to a boundary between the AP free layer and the cap layer;
• depositing insulating material at an oblique angle with respect to the bi-layer resist structure;
• removing the bi-layer resist structure;
• and
• depositing a second shield layer.