Temperature coefficient of resistance measurement of TMR head using flying height control heater and determine maximum bias voltage of TMR heads
AssigneeSamsung Electronics Co., Ltd.
InventorEunkyu Jang
Life of this patent
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Abstract
A method for determining whether a magneto-resistive head of a hard disk drive is defective for having an undesirable break down voltage. The method includes applying a voltage to a heater element of a magneto-resistive head and measuring a write element resistance and a read element resistance. A temperature coefficient of resistance for the read element is determined from the measured read and write element resistances. The head is considered defective if the temperature coefficient exceeds a threshold.
Claims9
A method for determining whether a magneto-resistive head of a hard disk drive is defective for having an undesirable break down voltage, comprising:
- applying a voltage to a heater element of a magneto-resistive head;
- measuring a write element resistance and a read element resistance;
- determining a temperature coefficient of resistance for the read element from the measured read and write element resistances;
- and,
- determining that the magneto-resistive head is defective if the temperature coefficient of resistance exceeds a threshold.
A method for determining a read bias voltage of a magneto-resistive head of a hard disk drive, comprising:
- applying a voltage to a heater element of a magneto-resistive head;
- measuring a write element resistance;
- determining a temperature coefficient of resistance for the read element from the measured write element resistance;
- and,
- determining the read bias voltage from the temperature coefficient of resistance.
A method for determining a read bias voltage of a magneto-resistive head of a hard disk drive, comprising:
- applying a voltage to a heater element of a magneto-resistive head;
- measuring a read element resistance;
- determining a temperature coefficient of resistance for the read element from the measured read element resistance;
- and,
- determining the read bias voltage from the temperature coefficient of resistance.
Dependencies are inferred from the claim text.