Apparatus of inspecting defect in semiconductor and method of the same
AssigneeHitachi High-Technologies Corporation
InventorsAkira Hamamatsu, Shunji Maeda, Hisae Shibuya
Life of this patent
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Abstract
When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
Claims8
Defect inspection apparatus comprising:
- an illumination unit for illuminating light to an object to be inspected,
- a detection unit for detecting light scattered from the object to be inspected by the illumination of light from the illumination unit
- a signal processing unit for detecting a defect by processing a detection signal of the scattered light from the object detected by the detection unit, and calculating size of the detected defect, and
- a display unit for displaying information of a result processed by the signal processing unit,
- wherein said signal processing unit calculates the size of the defect by changing a size calculation condition according to a position of the defect on the sample.
Defect inspection method, comprising the steps of:
- illuminating light to an object to be inspected,
- detecting light scattered from the object to be inspected by the illumination of the light,
- processing a detection signal of the scattered light detected by the detecting to detect a defect, and calculating size of the detected defect, and
- displaying information on a result of the processing and calculating,
- wherein in the step of processing, the size of the defect is calculated by changing a size calculation condition according to a position of the defect on the sample.
Dependencies are inferred from the claim text.