Semiconductor device and method for manufacturing the same, and electric device

An active matrix liquid crystal display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising an inorganic material formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix EL display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising an inorganic material formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a resin material formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix liquid crystal display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a resin material formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix EL display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a resin material formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a siloxane-based polymer formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix liquid crystal display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a siloxane-based polymer formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.

An active matrix EL display device comprising:

• a thin film transistor formed over a substrate, the thin film transistor comprising:
• a gate electrode;
• a gate insulating film formed over the gate electrode;
• and
• a semiconductor film comprising a metal oxide wherein the metal includes In;
• an insulating film comprising a siloxane-based polymer formed on the semiconductor film;
• and
• a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.