Solid-state imaging device and camera
AssigneeSony Corporation
InventorsIsao Hirota, Kouichi Harada, Nobuhiro Karasawa, Yasushi Maruyama, Yoshikazu Nitta, Hiroyuki Terakago, Hajime Takashima, Hideo Nomura
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AssigneeSony Corporation
InventorsIsao Hirota, Kouichi Harada, Nobuhiro Karasawa, Yasushi Maruyama, Yoshikazu Nitta, Hiroyuki Terakago, Hajime Takashima, Hideo Nomura
Estimating the term…
A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
A solid-state imaging device comprising pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit, wherein
A camera comprising:
Dependencies are inferred from the claim text.