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US 2009/0153625 A1Published application
Capacitor, method of manufacturing the same, method of manufacturing ferroelectric memory device, method of manufacturing actuator, and method of manufacturing liquid jet head
AssigneeSeiko Epson Corporation
InventorsDaisuke KOBAYASHI, Masao NAKAYAMA, Takeshi KIJIMA
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Abstract
A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane.
Claims12
An actuator comprising:
- a substrate;
- an elastic plate formed on the substrate;
- a lower electrode formed on the elastic plate;
- a piezoelectric film formed on the lower electrode;
- an upper electrode formed on the piezoelectric film;
- a first silicon oxide film formed on the upper electrode;
- and
- a second silicon oxide film formed on the first silicon oxide film,
- adhesion of the first silicon oxide film to the upper electrode being higher than adhesion of the second silicon oxide film to the upper electrode.
6 more elements
An actuator comprising:
- a substrate;
- an elastic plate formed on the substrate;
- a lower electrode formed on the elastic plate;
- a piezoelectric film formed on the lower electrode;
- an upper electrode formed on the piezoelectric film;
- a first silicon oxide film formed on the upper electrode;
- and
- a second silicon oxide film formed on the first silicon oxide film,
- an insulating property of the second silicon oxide film being higher than an insulating property of the first silicon oxide film.
6 more elements
An actuator comprising:
- a substrate;
- an elastic plate formed on the substrate;
- a lower electrode formed on the elastic plate;
- a piezoelectric film formed on the lower electrode;
- an upper electrode formed on the piezoelectric film;
- a first silicon oxide film formed on the upper electrode;
- and
- a second silicon oxide film formed on the first silicon oxide film,
- a water barrier property of the second silicon oxide film being higher than a water barrier property of the first silicon oxide film.
6 more elements
Dependencies are inferred from the claim text.