Integrated acoustic bandgap devices for energy confinement and methods of fabricating same

A method of fabricating an integrated circuit comprising:

• forming an integrated circuit device layer on a semiconductor substrate, the integrated circuit device layer having a plurality of individual devices formed therein;
• forming an interconnect layer over the interconnect device layer, the metal interconnect layer having at least one metal layer therein;
• forming an insulating over said interconnect layer;
• forming a first layer selected from one of a low acoustic impedance material and a high acoustic impedance material on the dielectric layer;
• forming a second layer selected from the other of a high acoustic impedance material and a low acoustic impedance material on the first layer, the first and second layers together forming a first period consisting of one layer of high acoustic impedance and one layer of low acoustic impedance;
• forming a bottom electrode layer over the second layer;
• forming a piezoelectric layer over the bottom electrode layer;
• forming a top electrode layer on the piezoelectric layer;
• forming a third layer selected from one of a low acoustic impedance material and a high acoustic impedance material on the top electrode layer;
• forming a fourth layer selected from the other of a high acoustic impedance material and a low acoustic impedance material on the first layer, the third and fourth layers together forming a second period consisting of one layer of high acoustic impedance and one layer of low acoustic impedance, wherein the piezoelectric material is substantially encapsulated by the bottom and top electrodes and first and second periods.

A method of fabricating an integrated circuit comprising:

• forming an active device layer on a semiconductor substrate;
• forming an interconnect structure integrated with the active device layer the interconnect structure having at least one metal layer;
• forming a circuit element comprising a resonator element embedded in an acoustic confinement structure on the semiconductor substrate;
• and
• monolithically integrating the oscillator element with the interconnect structure.

An integrated circuit device comprising:

• an circuit element means having a resonator means and an acoustic confinement means for preventing the ultrasonic wave from propagating away from the resonator means;
• and
• an integrated circuit means having a interconnect means;
• wherein the circuit element means is monolithically connected to the integrated circuit means in a unitary structure.