Film Forming Method for Dielectric Film
AssigneeTokyo Electron Limited
InventorsShinji Ide, Yasuhiro Oshima, Yusaku Kashiwagi
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Abstract
The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
Claims13
A film forming method for an SiOCH film, comprising a unit-film-forming step including:
- a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method;
- and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element,
- wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
A film forming apparatus comprising:
- a deposition apparatus configured to deposit an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method;
- a hydrogen plasma processing apparatus configured to provide a hydrogen plasma process to the deposited SiOCH film element;
- and
- an apparatus control unit configured to control the deposition apparatus and the hydrogen plasma processing apparatus, so as to carry out a film forming method for an SiOCH film, the method including a unit-film-forming step including:
- a deposition step of depositing the SiOCH film element by using the organic silicon compound as the raw material and by using the plasma CVD method;
- and a hydrogen plasma processing step of providing the hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
A storage medium storing a computer program to cause a computer to carry out a control method, wherein the control method is for controlling a film forming apparatus, the film forming apparatus including:
- a deposition apparatus configured to deposit an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method;
- and
- a hydrogen plasma processing apparatus configured to provide a hydrogen plasma process to the deposited SiOCH film element,
- wherein the control method is for controlling the deposition apparatus and the hydrogen plasma processing apparatus, so as to carry out a film forming method for an SiOCH film, the film forming method including a unit-film-forming step including:
- a deposition step of depositing the SiOCH film element by using the organic silicon compound as the raw material and by using the plasma CVD method;
- and a hydrogen plasma processing step of providing the hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
A multi-layer wiring structure comprising an interlayer insulating film composed of a plurality of SiOCH porous films formed on an insulating film, wherein a wiring layer is formed in the interlayer insulating film.
Dependencies are inferred from the claim text.