Epitaxial wafer and method of producing the same
AssigneeSumco Corporation
InventorsNaoshi Adachi, Tamio Motoyama
Life of this patent
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Abstract
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices.
Claims10
An epitaxial wafer comprising a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a carbon atom concentration of not less than 5.0×1017 atoms/cm3 but not more than 1.0×1021 atoms/cm3 and carbon atoms are existent between its silicon lattices.
A method of producing an epitaxial wafer, which comprises a step of growing a gettering epitaxial film containing silicon and carbon on a silicon substrate in a mixed gas atmosphere containing silicon and carbon at a temperature of higher than 750° C. and a step of forming a main silicon epitaxial film on the gettering epitaxial film, in which a carbon atom concentration in the gettering epitaxial film is made to not less than 5.0×1017 atoms/cm3 but not more than 1.0×1021 atoms/cm3 and carbon atoms are existent between silicon lattices.
Dependencies are inferred from the claim text.