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US 2009/0152684 A1Published application
Manufacture-friendly buffer layer for ferroelectric media
OwnerLi-Peng Wang, Qing Ma +1inventors
InventorsLi-Peng Wang, Qing Ma, Valluri Rao
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Abstract
The present invention describes a method including: providing a substrate; forming a buffer layer epitaxially over the substrate with a manufacture-friendly process; forming a bottom electrode epitaxially over the buffer layer; and forming a ferroelectric layer epitaxially over the bottom electrode.
Claims16
A method comprising:
- providing a substrate;
- forming a buffer layer epitaxially over said substrate with a manufacture-friendly process;
- forming a bottom electrode epitaxially over said buffer layer;
- and
- forming a ferroelectric layer epitaxially over said bottom electrode.
2 more elements
A structure comprising:
- a substrate, said substrate comprising a silicon wafer with a (001) single crystal orientation;
- a buffer layer disposed over said substrate, said buffer layer comprising a binary oxide having a cubic halide lattice structure with (001) as a lowest energy surface;
- a bottom electrode disposed over said buffer layer;
- and
- a ferroelectric layer disposed over said bottom electrodes.
2 more elements
A structure comprising:
- a substrate, said substrate comprising a silicon wafer with a (111) single crystal orientation;
- a buffer layer disposed over said substrate, said buffer layer comprising a rare-earth binary oxide having a cubic fluorite lattice structure symmetry with (111) as a lowest energy surface;
- a bottom electrode disposed over said buffer layer;
- and
- a ferroelectric layer disposed over said bottom electrodes.
2 more elements
Dependencies are inferred from the claim text.