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US 2009/0152679 A1Published application
Semiconductor device
AssigneeSeiko Instruments Inc.
InventorHirofumi Harada
Life of this patent
Estimating the term…
Abstract
A metal electrode is disposed on each of a plurality of resistor groups which are made of polycrystalline silicon resistors and constitute a resistor circuit. The metal electrode is connected to an end of the resistor via another interconnecting layer. Accordingly, the external influence which the metal electrode receives during a semiconductor manufacturing process is prevented from directly acting on the resistor, whereby resistance variation is suppressed.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate;
- a first insulating film disposed on the semiconductor substrate;
- a resistor disposed on the first insulating film and made of polycrystalline silicon having a low concentration impurity region and a high concentration impurity region;
- an interconnecting layer disposed away from the resistor;
- a second insulating film disposed on the resistor and the interconnecting layer;
- a metal line for connecting a contact hole on the high concentration impurity region of the resistor and a first contact hole on the interconnecting layer, the contact hole and the first contact hole being formed in the second insulating film;
- and
- a metal line for covering the low concentration impurity region of the resistor, connected to the interconnecting layer through a second contact hole on the interconnecting layer.
5 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first insulating film disposed on the semiconductor substrate;
- a resistor disposed on the first insulating film and made of polycrystalline silicon including a low concentration impurity region and a high concentration impurity region;
- a second insulating film disposed on the resistor;
- a first metal line disposed on the second insulating film to cover the low concentration impurity region of the resistor;
- a second metal line disposed on the second insulating film and connected to a contact hole provided on the high concentration impurity region of the resistor;
- a third insulating film disposed on the first metal line and the second metal line;
- and
- a third metal line disposed on the third insulating film, the first metal line and the third metal line being connected to each other via a through hole provided in the third insulating film, and the second metal line and the third metal line being connected to each other via another through hole provided in the third insulating film.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first insulating film disposed on the semiconductor substrate;
- a resistor disposed on the first insulating film and made of polycrystalline silicon;
- an interconnecting layer disposed away from the resistor;
- a second insulating film disposed on the resistor and the interconnecting layer;
- a metal line for connecting a contact hole disposed on one end of the resistor and a first contact hole disposed on the interconnecting layer, the contact hole and the first contact hole being disposed in the second insulating film;
- a contact hole disposed in the second insulating film on another end of the resistor;
- and
- a metal line for covering a region disposed between the contact hole disposed on the one end of the resistor and the contact hole disposed on the another end of the resistor, and connected to a second contact hole provided on the interconnecting layer.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first insulating film disposed on the semiconductor substrate;
- a resistor disposed on the first insulating film and made of polycrystalline silicon;
- a second insulating film disposed on the resistor;
- contact holes disposed in the second insulating film on both ends of the resistor;
- a first metal line disposed on the second insulating film to cover a region disposed between the contact holes disposed on the both ends of the resistor;
- a second metal line disposed on the second insulating film connected to one of the contact holes disposed on the both ends of the resistor;
- a third insulating film disposed on the first metal line and the second metal line;
- and
- a third metal line disposed on the third insulating film, the first metal line and the third metal line being connected to each other via a through hole provided in the third insulating film, and the second metal line and the third metal line being connected to each other via another through hole provided in the third insulating film.
7 more elements
Dependencies are inferred from the claim text.