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US 2009/0152673 A1Published application
Semiconductor device and method for forming the same
AssigneeElectronics and Telecommunications Research Institute
InventorsO-Kyun KWON, Dong-Woo SUH, Junghyung PYO, Gyung-Ock KIM
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Abstract
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
Claims15
A method for forming a semiconductor device, comprising:
- forming a buried insulating layer locally in a substrate;
- forming an opening exposing the buried insulating layer by etching the substrate, and forming a silicon pattern on the buried insulating layer and spaced from the substrate in at least one direction;
- and
- forming a first insulating layer enclosing the silicon pattern.
1 more element
A semiconductor device comprising:
- a substrate;
- a silicon pattern on the substrate, the silicon pattern having an bottom surface and sidewalls opposite to the substrate;
- and
- an insulating pattern interposed between the substrate and the silicon pattern and contacted with the bottom surface and the sidewalls of the silicon pattern.
1 more element
Dependencies are inferred from the claim text.