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US 2009/0152670 A1Published application
Semiconductor device and method of fabricating the same
OwnerDae-Kyeun Kiminventor
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Abstract
A semiconductor device and a method of fabricating the same includes a semiconductor substrate including a first trench; an epitaxial layer disposed on and/or over the semiconductor substrate and including a second trench connected to the first trench; a first insulator disposed in the first trench; and a second insulator disposed in the second trench.
Claims20
A device comprising:
- a semiconductor substrate including a first trench;
- an epitaxial layer formed over the semiconductor substrate, the epitaxial layer having a second trench connected to the first trench;
- a first insulator filling the first trench;
- and
- a second insulator filling the second trench.
2 more elements
A device comprising:
- a semiconductor substrate having a first trench formed therein;
- an epitaxial layer formed over the semiconductor substrate, the epitaxial layer having a second trench formed therethrough;
- and
- a device isolation layer formed penetrating through the epitaxial layer and partially through the semiconductor substrate, the device isolation layer including a first device isolation layer portion formed in the first trench and a second device isolation layer portion formed in the second trench.
1 more element
A method comprising:
- forming a first trench in a semiconductor substrate;
- and then
- filling a first insulator in the first trench;
- and then
- forming an epitaxial layer over the semiconductor substrate including the first trench and the first insulator;
- and then
- forming a second trench penetrating through the epitaxial layer and spatially corresponding to the first trench;
- and then
- filling a second insulator in the second trench.
6 more elements
Dependencies are inferred from the claim text.