Thermoelectric semiconductor device

A thermoelectric semiconductor device comprising:

• first and second ceramic layers having inner surfaces facing each other;
• a plurality of alternating P-type and N-type semiconductor elements disposed between said inner surfaces of said first and second ceramic layers and electrically interconnected in series, each of said P-type and N-type semiconductor elements having a cold junction proximate to said first ceramic layer, and a hot junction proximate to said second ceramic layer;
• first conductor elements attached to said inner surface of said first ceramic layer in a spaced apart relationship, each of said first conductor elements interconnecting electrically said cold junction of one of said P-type semiconductor elements and said cold junction of one of said N-type semiconductor elements;
• second conductor elements attached to said inner surface of said second ceramic layer in a spaced apart relationship, each of said second conductor elements interconnecting electrically said hot junction of one of said P-type semiconductor elements and said hot junction of one of said N-type semiconductor elements;
• and
• a thermal insulation material filled in gaps between said first and second ceramic layers and between said N-type and P-type semiconductor elements, said thermal insulation material being made from ammonium phosphate.