Structure and method for manufacturing device with planar halo profile
AssigneeInternational Business Machines Corporation
InventorsHUILONG ZHU, JING WANG
Life of this patent
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Abstract
A semiconductor device and method for manufacturing the device with a planar halo profile is provided. The semiconductor device can be a MOSFET. The method of forming the structure includes forming an angled spacer adjacent a gate structure and implanting a halo implant at an angle to form a halo profile having low dopant concentration near a gate dielectric under the gate structure. The structure includes an underlying wafer or substrate and an angled gate spacer having an upper portion and an angled lower portion. The upper portion is structured to prevent halo dopants from penetrating an inversion layer of the structure. The structure further includes a low concentration halo dopant within a channel of a gate structure.
Claims20
A method of forming a structure, comprising:
- forming an angled spacer adjacent a gate structure;
- and
- implanting a halo implant at an angle to form a halo profile having low dopant concentration near a gate dielectric under the gate structure.
A method of forming a device, comprising:
- etching layers above a substrate or wafer to form a trench having an angled surface in a (111) plane;
- forming an angled gate spacer within the angled opening, the angled gate spacer having a portion of its sidewall complimentary to the angled surface;
- removing upper layers of the layers;
- performing an angled implant of a low halo concentration, wherein the angled gate spacer prevents penetration into a gate structure and an underlying surface;
- and
- removing the angled gate spacer.
The method of claim 17, further comprising performing an angled extension doping and doping source and drain regions prior to a conformal deposition of a nitride layer in an undercut of the angled spacer.
An intermediate structure, comprising:
- an underlying wafer or substrate;
- an angled gate spacer having an upper portion and an angled lower portion, the upper portion structured to prevent halo dopants from penetrating an inversion layer of the structure;
- and
- a low concentration halo dopant within a channel of a gate structure.
Dependencies are inferred from the claim text.