US 2009/0152644 A1 · SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

Abstract

A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate. After a silicon nitride film is deposited over the substrate and an aperture reaching the substrate is formed by removing the silicon nitride film and the silicon oxide film at the anode formation part of the Schottky barrier diode, a Ti film is deposited over the substrate including the inside of the aperture, and a TiSi2 layer which becomes an anode electrode of the Schottky-barrier diode is formed at the bottom of the aperture by applying a heat treatment to the substrate.

Claims10

Dependent claims

A semiconductor device comprising:

a MISFET including a source region and a drain region formed in a first region over the main surface of a semiconductor substrate including silicon as a main component and a gate electrode including said silicon as a main component;
and
a Schottky-barrier diode including a first electrode and a second electrode formed in a second region over said main surface of said semiconductor substrate,
wherein, a first metallic compound layer including said silicon and a first metal is formed over the surface of said source region, said drain region, and said gate electrode,
wherein said first electrode is formed of said first metallic compound layer,
wherein said second electrode is formed of a second metallic compound layer including said silicon and a second metal, and
wherein said second metallic compound layer has a lower Schottky-barrier than the case to form said second electrode with said first metallic compound layer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and a method of manufacturing the same

Life of this patent

Semiconductor device and a method of manufacturing the same

Life of this patent

Abstract

Claims10