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US 2009/0152641 A1Published application
Semiconductor memory device and method for manufacturing
AssigneeFujitsu Microelectronics Limited
InventorNarumi Ohkawa
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes: a first n-type transistor; a first p-type transistor; a first wiring layer having a first interconnecting portion for connecting a drain of the first n-type transistor and a drain of the first p-type transistor; and a second wiring layer having a first conductive portion electrically connected to the first interconnecting portion.
Claims19
A semiconductor memory device comprising:
- a first n-type transistor;
- a first p-type transistor;
- a first wiring layer having a first interconnecting portion for connecting a drain of said first n-type transistor and a drain of said first p-type transistor;
- and
- a second wiring layer having a first conductive portion electrically connected to said first interconnecting portion.
2 more elements
A method for manufacturing a semiconductor memory device, comprising the steps of:
- forming a first n-type transistor and a first p-type transistor on a semiconductor substrate;
- forming an interconnecting portion for connecting a drain of said first n-type transistor and a drain of said first p-type transistor;
- forming a first insulating film on said interconnecting portion;
- forming a conductive plug in said first insulating film and contacting said interconnecting portion;
- and
- forming a first conductive portion in contact with said conductive plug and a first wiring electrically isolated from said first conductive portion on said first insulating film.
3 more elements
A method for manufacturing an SRAM having a first inverter and a second inverter, comprising the steps of:
- forming a first interconnecting portion for connecting a first input portion of said first inverter and a first output portion of said second inverter;
- forming a first insulating film on said first interconnecting portion;
- forming a first opening reaching to said first interconnecting portion and a second opening separated from said first opening in said first insulating film;
- and
- forming a first conductive portion electrically connected to said first interconnecting portion in said first opening and forming a first wiring capacitively coupled with said first conductive portion in said second opening by burying a conductive member in said first opening and said second opening.
2 more elements
Dependencies are inferred from the claim text.