Pfet with tailored dielectric and related methods and integrated circuit

A p-type field effect transistor (PFET) comprising:

• an n-type doped silicon well (N-well);
• and
• a gate stack including:
• a doped band engineered PFET threshold voltage (Vt) work function tuning layer over the N-well;
• a tailored dielectric layer over the doped band engineered PFET Vt work function tuning layer, the tailored dielectric layer constituted by a high dielectric constant layer over the doped band engineered PFET Vt work function tuning layer and an n-type field effect transistor (NFET) threshold voltage (Vt) work function tuning layer over the high dielectric constant layer;
• and
• a metal over the NFET Vt work function tuning layer.

An integrated circuit (IC) comprising:

• a p-type field effect transistor (PFET) including:
• an n-type doped silicon well (N-well);
• and
• a gate stack including:
• a doped band engineered PFET threshold voltage (Vt) work function tuning layer over the N-well;
• a tailored dielectric layer over the doped band engineered PFET Vt work function tuning layer, the tailored dielectric layer constituted by a high dielectric constant layer over the doped band engineered PFET Vt work function tuning layer and an n-type field effect transistor (NFET) threshold voltage (Vt) work function tuning layer over the high dielectric constant layer;
• and
• a metal over the tailored dielectric layer.