Method of forming a semiconductor device and semiconductor device
AssigneeFreescale Semiconductor, Inc.
InventorJohn M. Grant
Life of this patent
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Abstract
A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides of the control electrode, and forming doped regions in the semiconductor layer through the recesses. The doped regions form current electrode regions of the semiconductor device and each doped region extends into the semiconductor layer from at least a base of a recess. The method further comprises forming, after forming the doped regions, strained semiconductor regions in the recesses, wherein a junction between each doped region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer.
Claims20
A method of forming a semiconductor device comprising:
- providing a semiconductor layer;
- forming a control electrode over a portion of the semiconductor layer;
- forming recesses extending into the semiconductor layer on opposing sides of the control electrode;
- forming doped regions in the semiconductor layer through the recesses, the doped regions forming current electrode regions of the semiconductor device and each doped region extending into the semiconductor layer from at least a base of a recess;
- forming, after forming the doped regions, strained semiconductor regions in the recesses, wherein a junction between each doped region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer having a control electrode over a portion of the semiconductor layer and recesses extending into the semiconductor layer on opposing sides of the control electrode;
- doped regions forming current electrode regions of the semiconductor device, each doped region extending into the semiconductor layer from at least a base of a recess in the semiconductor layer;
- strained semiconductor regions formed in the recesses, wherein a junction between each doped region and the semiconductor layer is formed a predetermined depth below an interface between a strained semiconductor region and the semiconductor layer, the semiconductor device being characterised in that wherein the predetermined depth is dependent only on a level of energy used to form the doped regions and the contour of the recesses.
A method of forming a semiconductor device comprising:
- providing a semiconductor layer;
- forming a control electrode over a portion of the semiconductor layer;
- forming recesses extending into the semiconductor layer on opposing sides of the control electrode;
- forming a first layer of a first semiconductor material doped with a dopant in the recesses, in each recess the dopant of the first layer forming a current electrode region of the semiconductor device;
- and
- forming a second layer of a second semiconductor material in the recesses over the first layer, the second semiconductor material being different to the first semiconductor material and having a lattice spacing different to the lattice spacing of the semiconductor layer such that the second layer forms strained semiconductor regions in the recesses, wherein a junction between each current electrode region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer.
Dependencies are inferred from the claim text.